transient voltage suppressors for esd protection revision december 18 , 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd05v02d - lc un semiconductor co., ltd. www. unsemi .com .tw 0201/dfn0603 the esd05v02d - lc is dual directional voltage rail clamp ultra - low capacitance transient voltage suppressor, electrical characteristics is positive/negative direction are symmetry, and the maximum capacitance is 0.9pf. it can be used for power supply line p rotection, control line protection and high - speed data line protection during static discharging, transient pulse and lightning discharge. ? bi - directi onal esd protection of one line ; ? ultra capacitance structure: 0.5pf; ? low clamping voltage; ? low operating voltage 5v; ? low leakage ; ? provides esd protection to iec61000 - 4 - 2(esd): 15kv (air discharge) 8kv (contact discharge); ? high - speed data line interface. ? 10/100/1000m ethernet; ? personal digital assistants (pdas) ; ? notebooks (dvi/hdmi) desktops and servers ; ? usb interface; ? cell phone accessories; ? digital camera; ? case:0201/ dfn 0603 package molded plastic. ? terminals: gold plated, solderable per mil - std - 750, m ethod 2026. ? polarity: color band denotes cathode end. ? mounting position: any ? reel size : 7 inc h symbol parameter value units ipp peak pulse current (tp=8/20us) 2.5 a t j operating junction temperature range - 55 to +125 oc t stg storage temperature range - 55 to +150 oc t l soldering temperature, t max = 10s 260 oc v esd iec61000 - 4 - 2 (esd) air discharge 15 min kv contact discharge 8 min mechanical characteristics d escription feature functional diagram applications mechanical data
transient voltage suppressors for esd protection revision december 18 , 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd05v02d - lc un semiconductor co., ltd. www. unsemi .com .tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm -- -- -- 5 v reverse breakdown voltage v br it=1ma 6 -- 9 v reverse leakage current i r v rwm = 5 v t=25 c -- -- 1 a positive clamping voltage v c1 i pp = 1 a t p =8/20 s -- 8 .5 12 v capacitance between i/o and gnd c j2 v r =0v f=1mhz -- 0.5 0.9 pf electrical characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% fig1. 8/20 s pulse waveform fig2 . esd p ulse w aveform ( according to iec 61000 - 4 - 2 ) fig3. power derating curve f i g 4 . v - i characteristics for a bi di rect ional esd pr ote ct ion di ode
transient voltage suppressors for esd protection revision december 18 , 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd05v02d - lc un semiconductor co., ltd. www. unsemi .com .tw fig 5 . clamping voltage vs. peak pulse current fig 6 . capacitance between terminals characteristics characteristic curves 0201/dfn0603 package outline & dimensions mechanical details land layout
|
